Third Generation BESOI (Back-Enhanced SOI) pMOSFET fabricated on UTBB Wafer

Abstract

The third generation BESOI MOSFET (Back-Enhanced Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect-transistor) on UTBB (Ultra-Thin Body and Buried Oxide) was fabricated, analyzed and compared to the BESOI with thick buried oxide (first generation). The stronger coupling between front and back interfaces for UTBB BESOI devices improves most of the parameters analyzed. Its higher drain current (67%), maximum transconductance (122%) and body factor (217%) with seven times lower back gate bias make the UTBB BESOI MOSFET more compatible with standard SOI CMOS (Complementary MOS) technology than the BESOI with thick buried oxide.