Dong-il Moon, Jun-Y. Park, Jin-woo Han, Gwang-Jae Jeon, Jee-Yeon Kim, John U. Moon, Myeong-Lok Seol, C. Kim, Hee-Chul Lee, M. Meyyappan, Yang‐Kyu Choi
{"title":"Sustainable electronics for nano-spacecraft in deep space missions","authors":"Dong-il Moon, Jun-Y. Park, Jin-woo Han, Gwang-Jae Jeon, Jee-Yeon Kim, John U. Moon, Myeong-Lok Seol, C. Kim, Hee-Chul Lee, M. Meyyappan, Yang‐Kyu Choi","doi":"10.1109/IEDM.2016.7838524","DOIUrl":null,"url":null,"abstract":"An on-the-fly self-healing device is experimentally demonstrated for sustainability of space electronics. A high temperature, which is generated by Joule heating in a gate electrode, provides an on-chip annealing of damages induced by ionizing radiation, hot carrier, and tunneling stress. With the self-healing process, a highly scaled silicon nanowire gate-all-around field-effect transistor shows improved long-term reliability in a logic transistor, floating body DRAM, and charge-trap Flash memory, respectively. A thermally isolated gate structure is proposed to enhance the self-healing effect.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838524","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27
Abstract
An on-the-fly self-healing device is experimentally demonstrated for sustainability of space electronics. A high temperature, which is generated by Joule heating in a gate electrode, provides an on-chip annealing of damages induced by ionizing radiation, hot carrier, and tunneling stress. With the self-healing process, a highly scaled silicon nanowire gate-all-around field-effect transistor shows improved long-term reliability in a logic transistor, floating body DRAM, and charge-trap Flash memory, respectively. A thermally isolated gate structure is proposed to enhance the self-healing effect.