Electro-mediated damage in the narrowest pore of voltage-gated K channels in frog skeletal muscle membrane

W. Chen, R.C. Lee
{"title":"Electro-mediated damage in the narrowest pore of voltage-gated K channels in frog skeletal muscle membrane","authors":"W. Chen, R.C. Lee","doi":"10.1109/IEMBS.1994.412151","DOIUrl":null,"url":null,"abstract":"Summary form only given as follows: In addition to electroporation of cell membranes, the authors have also shown shock pulse-induced reduction in voltage-gated ionic channel conductance and channel selectivity, which suggests possible electroconformational changes in proteins of the cell membrane. Therefore, the authors are now attempting to locate the damage in the protein structure. Some of their evidence suggests that the most vulnerable subgroups of channel proteins are located at the narrowest pore of the channels. Experiments were performed using an improved double vaseline-gap voltage and current clamp technique with cut fibers from skeletal muscle of the frog Rana temporaria. The experimental results showed that: 1) the binding of the neurotoxins TIX and TEA on sodium (Na) and potassium (K) channels are not affected by the high voltage electrical shock pulses; 2) the inactivity curve of the delayed rectifier K channel shows little change following electric shock; and 3) K channel conductance and ionic selectivity can be significantly reduced by the electric shock pulse, predicting a depolarization of the membrane resting potential, which has been further proved by directly measuring membrane potential response to an electrical shock. The figure below shows the shock pulse-induced depolarization of the membrane resting potential. Combining these functional alterations of channel proteins, it is possible to answer the question of what subgroups of the channel proteins are the most sensitive to a high voltage electrical shock. The neurotoxin binding sites of TTX and TEA are most likely located on the peripheral residue of the channel proteins not in the narrowest pore of the selectivity filter. Similarly, the well-accepted hypothesis of the channel inactivity suggests that channel inactivity function be correlated to the amino-terminal residues, which are intracellularly located away from the selectivity filter. In contrast, reduction of channel conductance and ionic selectivity are primarily correlated to the narrowest pore of the channels, the selectivity filter. In other words, the narrowest pore of the ion channel with a diameter of a few /spl Aring/ is the most sensitive subgroup to the external electrical field.<<ETX>>","PeriodicalId":344622,"journal":{"name":"Proceedings of 16th Annual International Conference of the IEEE Engineering in Medicine and Biology Society","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 16th Annual International Conference of the IEEE Engineering in Medicine and Biology Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMBS.1994.412151","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Summary form only given as follows: In addition to electroporation of cell membranes, the authors have also shown shock pulse-induced reduction in voltage-gated ionic channel conductance and channel selectivity, which suggests possible electroconformational changes in proteins of the cell membrane. Therefore, the authors are now attempting to locate the damage in the protein structure. Some of their evidence suggests that the most vulnerable subgroups of channel proteins are located at the narrowest pore of the channels. Experiments were performed using an improved double vaseline-gap voltage and current clamp technique with cut fibers from skeletal muscle of the frog Rana temporaria. The experimental results showed that: 1) the binding of the neurotoxins TIX and TEA on sodium (Na) and potassium (K) channels are not affected by the high voltage electrical shock pulses; 2) the inactivity curve of the delayed rectifier K channel shows little change following electric shock; and 3) K channel conductance and ionic selectivity can be significantly reduced by the electric shock pulse, predicting a depolarization of the membrane resting potential, which has been further proved by directly measuring membrane potential response to an electrical shock. The figure below shows the shock pulse-induced depolarization of the membrane resting potential. Combining these functional alterations of channel proteins, it is possible to answer the question of what subgroups of the channel proteins are the most sensitive to a high voltage electrical shock. The neurotoxin binding sites of TTX and TEA are most likely located on the peripheral residue of the channel proteins not in the narrowest pore of the selectivity filter. Similarly, the well-accepted hypothesis of the channel inactivity suggests that channel inactivity function be correlated to the amino-terminal residues, which are intracellularly located away from the selectivity filter. In contrast, reduction of channel conductance and ionic selectivity are primarily correlated to the narrowest pore of the channels, the selectivity filter. In other words, the narrowest pore of the ion channel with a diameter of a few /spl Aring/ is the most sensitive subgroup to the external electrical field.<>
蛙骨骼肌膜电压门控K通道最窄孔的电介导损伤
除了细胞膜的电穿孔外,作者还发现了冲击脉冲引起的电压门控离子通道电导和通道选择性的降低,这表明细胞膜蛋白质可能发生电构象变化。因此,作者现在正试图定位蛋白质结构中的损伤。他们的一些证据表明,通道蛋白最脆弱的亚群位于通道最窄的孔处。实验采用改进的双凡士林间隙电压和电流钳技术,从蛙的颞蛙骨骼肌切断纤维。实验结果表明:1)神经毒素TIX和TEA在钠(Na)和钾(K)通道上的结合不受高压电击脉冲的影响;2)延时整流器K通道的失活曲线在触电后变化不大;3) K通道电导和离子选择性可以显著降低,预测膜静息电位的去极化,这一点通过直接测量膜电位对电击的响应得到了进一步的证明。下图显示了冲击脉冲引起的膜静息电位的去极化。结合这些通道蛋白的功能改变,有可能回答通道蛋白的哪些亚群对高压电击最敏感的问题。TTX和TEA的神经毒素结合位点很可能位于通道蛋白的外周残基上,而不是在选择性过滤器的最窄孔上。同样,通道失活的普遍假设表明,通道失活功能与氨基末端残基有关,这些残基位于细胞内,远离选择性过滤器。相比之下,通道电导和离子选择性的降低主要与通道的最窄孔(选择性过滤器)有关。换句话说,离子通道中最窄的孔(直径为几/spl)是对外部电场最敏感的亚群。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信