High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP quantum wells vertical cavity surface emitting laser

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-12-01 DOI:10.1109/ISLC.2004.1382773

H. Kuo, Ya-hsien Chang, F. Lai, Po-Tsung Lee, Shing-chung Wang

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Abstract

High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than -30% when the temperature raised from room temperature to 70 /spl deg/C. High modulation bandwidth of 10.1 (8.8) GHz at 25 /spl deg/C (70 /spl deg/C) and bias current 6 mA are demonstrated.

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高性能1.27 /spl μ m InGaAs:Sb-GaAsP量子阱垂直腔面发射激光器

1.27 /spl mu/m的InGaAs:Sb-GaAsP垂直腔面发射激光器(VCSELs)具有优异的性能和温度稳定性。当温度从室温升高到70℃时，阈值电流在1.8 ~ 1.1 mA之间变化，斜率效率下降小于-30%。在25 /spl度/C (70 /spl度/C)和6 mA偏置电流下，高调制带宽为10.1 (8.8)GHz。

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来源期刊

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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