High-efficiency broadband monolithic pseudomorphic HEMT amplifiers at Ka-band

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.185995

H. Tserng, P. Saunier, Y. Kao

引用次数: 12

Abstract

The design and performance of high-efficiency, broadband (up to 7 GHz), monolithic Ka-band amplifiers using doped channel power pseudomorphic high-electron-mobility transistors (HEMTs) are discussed. Amplifiers with output powers as high as 500 mW and power-added-efficiencies as high as 40% were demonstrated.<>

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ka波段高效宽带单片伪晶HEMT放大器

讨论了采用掺杂通道功率伪晶高电子迁移率晶体管(hemt)的高效率、宽带(高达7 GHz)单片ka波段放大器的设计和性能。演示了输出功率高达500mw，功率附加效率高达40%的放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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