Numerical modeling of high sensitivity nanoscale FinFET biosensor for health care applications

R. Ramesh, K. Kannan, M. Madheswaran
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引用次数: 1

Abstract

The development in the field of sensors in general and biosensors in particular has motivated the research in the recent past. The design and fabrication of devices for health care monitoring has drawn attention in the twenty first century. The simulation of the high-k dielectric (HfO2) FinFET biosensor with nano dimension has been carried out and presented in the present paper. Based on the existing literature it has been found that in order to facilitate an easier match with the biological stimulus the HfO2 dielectric FinFET can be preferred. Keeping this in view, the three dimensional numerical simulation of the HfO2 FinFET has been done to study the potential use as sensor for health care applications. The device equations are numerically solved including quantum mechanical effects to estimate the performance of the device for biological applications. The results show that the device characteristics are strongly influenced by the light even if the intensity is very less. The integrated circuit compatibility of the HfO2 FinFET device also enhances the potential use for future biological systems.
用于医疗保健的高灵敏度纳米FinFET生物传感器的数值模拟
近年来,传感器领域尤其是生物传感器领域的发展推动了这一领域的研究。在21世纪,医疗保健监测设备的设计和制造引起了人们的关注。本文对高介电常数(HfO2) FinFET生物传感器进行了纳米尺度的仿真研究。根据已有的文献发现,为了更容易与生物刺激匹配,HfO2介电FinFET可以首选。考虑到这一点,对HfO2 FinFET进行了三维数值模拟,以研究其作为医疗保健传感器的潜在用途。对器件方程进行了数值求解,包括量子力学效应,以估计器件在生物应用中的性能。结果表明,即使光的强度很低,器件的特性也会受到强烈的影响。HfO2 FinFET器件的集成电路兼容性也增强了未来生物系统的潜在用途。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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