Ultimate error detection circuit for the hybrid electron turnstiles

Abstract

In order to study error mechanisms in the hybrid superconductor-normal metal turnstiles, we implemented a single-electron device, based on such a turnstile, connected in series to a high-ohmic resistor and terminated by an electron trapping node, coupled capacitively to a single-electron electrometer. This layout brings an advantage, on a single-electron level both to quantify the leakage rates in the dc mode, and to model the pumping regime with the aid of an electron shuttling experiment.