A wideband LNA in 40nm CMOS

Abstract

A 3-stage wideband low-noise amplifier (LNA) which operates from 45 GHz to 70 GHz is presented in this paper. A cascode amplifier with an active feedback is adopted in the first stage to realize broadband and partial noise cancelling. The capacitive cross-coupling (CCC) neutralization technology is used in the second and third stages to obtain a high gain and reverse isolation. Simulated results show that the LNA achieves 21dB gain and 6.16dB noise figure (NF) at 60 GHz. The 3-dB bandwidth is 25 GHz from 45 GHz to 70GHz, while the NF is less than 7.75dB over the entire band. The LNA is designed in 40nm CMOS process. It occupies an area of 0.99mm*0.33mm including all pads. To the author's knowledge, the proposed LNA achieves a highest bandwidth while having a comparable gain and NF in such frequency band.