Demonstration of dual switching operation of vertical gate-all-around transistor using InGaAs/GaSb core-shell nanowires on Si

Abstract

We demonstrated vertical gate-all-around field-effect transistor using the InGaAs/GaSb core-shell nanowires on Si. This device can operate both p-channel FET and n-channel TFET in the same channel architecture by changing bias polarity. The p-channel FET mode had a minimum subthreshold slope (SS) of 115 mV/decade and Ion/Ioff ratio of around 10² at VDS = −1.00 V. The n-channel TFET mode showed SS of 105 mV/decade at VDS = 0.50 V.