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DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION

EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR Pub Date : 1989-12-31 DOI:10.1515/9783112575666-024
M. Kejhar
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Si-SiO2界面态密度与离子注入过程的关系及其在低剂量离子注入评价中的应用
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EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR
EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR
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