Yegao Xiao, M. Lestrade, Zhiqiang Li, Zhanming S. Li
{"title":"2D modeling of perovskite/Si tandem solar cell","authors":"Yegao Xiao, M. Lestrade, Zhiqiang Li, Zhanming S. Li","doi":"10.1117/12.2680269","DOIUrl":null,"url":null,"abstract":"Based on a drift-diffusion simulator, 2D modeling of perovskite/Si tandem solar cell with tunnel junction is presented in this work. Current matching is explored between the two sub-cells. It is demonstrated that the basic tandem cell can achieve conversion efficiency as high as 28.27% with open-circuit voltage and short-circuit current density as 2.04 V and 16.18 mA/cm2 , respectively. As approaches for cell design optimization, the results are also analyzed versus the thickness and the minority carrier recombination lifetime of the perovskite layer. Efforts to incorporate coating, to consider texture effect for the bottom Si cell as well as to look for alternative electron transport layer for the top junction are also performed, presented and discussed. Efficiency as high as 36.40% is further projected.","PeriodicalId":145218,"journal":{"name":"Organic Photonics + Electronics","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Organic Photonics + Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2680269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Based on a drift-diffusion simulator, 2D modeling of perovskite/Si tandem solar cell with tunnel junction is presented in this work. Current matching is explored between the two sub-cells. It is demonstrated that the basic tandem cell can achieve conversion efficiency as high as 28.27% with open-circuit voltage and short-circuit current density as 2.04 V and 16.18 mA/cm2 , respectively. As approaches for cell design optimization, the results are also analyzed versus the thickness and the minority carrier recombination lifetime of the perovskite layer. Efforts to incorporate coating, to consider texture effect for the bottom Si cell as well as to look for alternative electron transport layer for the top junction are also performed, presented and discussed. Efficiency as high as 36.40% is further projected.