Effective noise minimization in multichannel recording circuits processed in modern technologies for neurobiology experiments

P. Kmon, P. Grybos, M. Zoladz, R. Szczygiel
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引用次数: 1

Abstract

This paper presents an effective method of input referred noise minimization (IRN) of recording stages dedicated to neurobiology experiments and processed in submicron or nanometer technologies. We analyze different approaches for IRN minimization and propose solution based on the on-chip analogue noise averaging. The proposed approach allows for almost 2.5 times IRN minimization with only 8 time power consumption increase whereas other on-chip analogue methods provides much less noise minimization efficiency. The method is confirmed by measurements of 8-channel integrated circuit fabricated in 180nm commercial process. The chip is composed of the 8-recording channels that are individually digitally assisted for enlarging IC functionality. The recording part is divided into two separate channels, i.e. an Action Potential (AP) stage and a Local Field Potential (LFP) stage. The voltage gain of the AP and LFP stages can be switched between 56/50 dB and 50/45 dB respectively. Corner frequencies of a particular stages can be digitally controlled in a wide range, i.e. the upper cut-off frequency can be changed in the 20 Hz - 2 kHz (LFP stage) while the lower cut-off frequency can be tuned at the 120 mHz - 3 kHz (LFP and AP stage). The upper cut-off frequency of the AP stage is equal to 6.9 kHz. A single recording channel is supplied from ±0.9 V and consumes about 4.8 μW of power. For a default channel configuration the Input Referred Noise is equal to 5.6 μV resulting in 4.38 of Noise Efficiency Factor (NEF) while for on-chip averaging mode enabled the IRN can be limited to 2.4 μV resulting in 5.3 of NEF.
神经生物学实验中多通道记录电路的有效噪声最小化
本文提出了一种有效的神经生物学实验记录台的输入参考噪声最小化方法。我们分析了不同的IRN最小化方法,并提出了基于片上模拟噪声平均的解决方案。所提出的方法允许几乎2.5倍的IRN最小化,而功耗仅增加8倍,而其他片上模拟方法提供的噪声最小化效率要低得多。通过对180nm制程8通道集成电路的测量,验证了该方法的有效性。该芯片由8个记录通道组成,这些通道分别以数字方式辅助,以扩大IC功能。记录部分分为两个独立的通道,即动作电位(AP)阶段和局部场电位(LFP)阶段。AP级和LFP级的电压增益可分别在56/50 dB和50/45 dB之间切换。特定级的拐角频率可以在很宽的范围内进行数字控制,即上截止频率可以在20 Hz - 2 kHz (LFP级)范围内改变,而下截止频率可以在120 mHz - 3 kHz (LFP和AP级)范围内调谐。AP级的上限截止频率为6.9 kHz。单个记录通道由±0.9 V供电,功耗约为4.8 μW。对于默认通道配置,输入参考噪声等于5.6 μV,导致噪声效率因子(NEF)为4.38,而对于启用片上平均模式,IRN可以限制为2.4 μV,导致NEF为5.3。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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