S. Douglass, B. Weber, C. Eddy, M. Lampe, G. Joyce, W. Manheimer
{"title":"Diagnostic Characterization And Theoretical Modeling Of Ecr Plasmas","authors":"S. Douglass, B. Weber, C. Eddy, M. Lampe, G. Joyce, W. Manheimer","doi":"10.1109/PLASMA.1994.588794","DOIUrl":null,"url":null,"abstract":"utllired to r a varier) ot etching applications riiciuding etching of 111V coinpound> I ? / and .;illcon etching !31 A thorough underitaiiciiiig of thr plavna pioperties. though. i:, helptul 11: obraining uiri'ul etching characrei istic\\ Tc; betrei uiider\\tand the plasma properties in particuiai the ion energies. ion deiisirie\\ and the relnpei-ature ot the neutral specieb. ;I serich ot \\tatistidly de\\igned expel iinent\\ has been undertaken. 'Thi\\ work examineh 41-1 argon-SF(, discharge used foi etching \\i!~con The ion energy di\\ti-ibution i s \" x u r e d u m g laser induced Huorehcence spectroscopy on d metasrablr argon ion species. The neutral temperarui c is ineaxured usitig high-resolurioi; Doppler-broadened eini\\\\ion spectroxopy on the argon atom and the ion densit! i s intmured usiiig Langmuir probes. Thehe rneilsurernerits are prrwired for a 12.5 i m discharge pi-oduced using a inicrowave cavit); excited in the TE:,, inode Thr nominal experimental conditions are 2.5 inToi-i-. 225 Watts microwave power. an argon How of 20 sccin with 1Cl'i SF,. These conditions are varied over a pressure range froin 1 inTorr to 4 inTorimcl a microwave power range fi-oin 100 to 350 Watts. The SF, flow is varied from 5% to 15% of the argon flow, such that the total gas flowrate varies hom 21 sccm to 23 sccm. The development of statisticaliexperimental model5 which relate input variable values to internal pla\\ina quantities is expected to be useful in the control of plasind processing. The re\\ults will he presented as response surface inetliodology inodcls.","PeriodicalId":254741,"journal":{"name":"Proceedings of 1994 IEEE 21st International Conference on Plasma Sciences (ICOPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 21st International Conference on Plasma Sciences (ICOPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PLASMA.1994.588794","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
utllired to r a varier) ot etching applications riiciuding etching of 111V coinpound> I ? / and .;illcon etching !31 A thorough underitaiiciiiig of thr plavna pioperties. though. i:, helptul 11: obraining uiri'ul etching characrei istic\ Tc; betrei uiider\tand the plasma properties in particuiai the ion energies. ion deiisirie\ and the relnpei-ature ot the neutral specieb. ;I serich ot \tatistidly de\igned expel iinent\ has been undertaken. 'Thi\ work examineh 41-1 argon-SF(, discharge used foi etching \i!~con The ion energy di\ti-ibution i s " x u r e d u m g laser induced Huorehcence spectroscopy on d metasrablr argon ion species. The neutral temperarui c is ineaxured usitig high-resolurioi; Doppler-broadened eini\\ion spectroxopy on the argon atom and the ion densit! i s intmured usiiig Langmuir probes. Thehe rneilsurernerits are prrwired for a 12.5 i m discharge pi-oduced using a inicrowave cavit); excited in the TE:,, inode Thr nominal experimental conditions are 2.5 inToi-i-. 225 Watts microwave power. an argon How of 20 sccin with 1Cl'i SF,. These conditions are varied over a pressure range froin 1 inTorr to 4 inTorimcl a microwave power range fi-oin 100 to 350 Watts. The SF, flow is varied from 5% to 15% of the argon flow, such that the total gas flowrate varies hom 21 sccm to 23 sccm. The development of statisticaliexperimental model5 which relate input variable values to internal pla\ina quantities is expected to be useful in the control of plasind processing. The re\ults will he presented as response surface inetliodology inodcls.