Gamma-irradiation effects in power MOSFETs for application in communication satellites

Abstract

The effects of pre-irradiation elevated-temperature bias stressing on the radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift in stressed, and more considerable mobility reduction in unstressed devices have been observed. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects.