Analysis of the Effect of Hot Carrier Injection in An Integrated Inductive Voltage Regulator

Abstract

This paper presents a simulation-based study to evaluate the effect of Hot Carrier Injection (HCI) on the characteristics of an on-chip, digitally-controlled, switched inductor voltage regulator (IVR) architecture. Our methodology integrates device-level aging models, circuit simulations in SPICE, and control loop simulations in Simulink. We characterize the effect of HCI on individual components of an IVR, and their combined effect on the efficiency and transient performance. Our analysis using an IVR designed in 65nm CMOS shows that aging of the power stages has a smaller impact on performance compared to that of the control loop. Further, we perform a comparative analysis to show that, with a 1.8V supply, HCI leads to higher aging-induced degradation of IVR than Negative Bias Temperature Instability (NBTI). Finally, our simulation shows that parasitic inductance near IVR input aggravates NBTI and parasitic capacitance near IVR output aggravates HCI effects on IVR’s performance.