Graphene Nanowire Based TFETs

Abstract

The present work is aimed at improving the performance potential of tunnel field effect transistors (TFETs), where the carriers are transported by the process of band to band tunneling. The nanoscale TFETs serves the purpose of ULSI integration with high speed and memory. The requirements of new device technology are challenging: for logical switching. In this paper, a p-channel graphene nanoribbon (GNR) TFETs has been analyzed and designed for low power and high performance digital switching application. The energy band diagram of the device is obtained from self-consistent iterative method for numerical solution of one-dimensional Poisson ’ s equation subject to appropriate boundary conditions. It is observed that the optimized p + channel GNR TFET provides high ON – OFF current ratio, low sub-threshold slope for a channel length of 85 nm and channel width of 4 nm.