Performance improvement of a thick field oxide ESD protection circuit by halo implant

P. Gilbert, P. Tsui, Shih-Wei Sun, S. Jamison, J. Miller
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引用次数: 1

Abstract

Optimization of a sub-0.5 /spl mu/m ESD protection circuit using halo implant is described. A p-type halo implant significantly improves the ESD robustness of a high performance I/O circuit as noted by Human Body Model (HBM) test results. The improved ESD performance is directly attributed to the ability of the halo implanted Thick Field Oxide (TFO) device to inhibit the turn-on of the n-channel output buffer during an ESD event. Improved ESD performance is achieved without the use of additional series resistance and with no increase in device area. The results represent the first time transmission-line pulse generator (TLPG) analysis has been used on a fully synthesized I/O circuit to predict wafer level ESD performance.
光晕植入改善厚场氧化ESD保护电路的性能
本文介绍了一种利用光晕植入的低于0.5 /spl mu/m的ESD保护电路的优化设计。人体模型(HBM)测试结果表明,p型光晕植入物显著提高了高性能I/O电路的ESD稳健性。提高的ESD性能直接归功于halo植入厚场氧化物(TFO)器件在ESD事件中抑制n通道输出缓冲器的导通能力。在不使用额外的串联电阻和不增加器件面积的情况下,实现了更好的ESD性能。该结果是首次将传输在线脉冲发生器(TLPG)分析用于完全合成的I/O电路,以预测晶圆级ESD性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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