Interface Defective Effect on Performance of (p+)µc-SiC:H/(i)a-Si:H/(n+)a-Si:H Solar Cells

Wensheng Wei, Congliang Zhang, Feng Shan
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引用次数: 0

Abstract

Photovoltaic cell with superstrate structure of (p+)a-SiC:H/buffer/(i)a-Si:H/(n+)a-Si:H was optimized and cell performance was analyzed by a numerical software of one-dimensional device simulation program of analysis of microelectronic and photonic structures (AMPS-1D) in this paper. The consanguineous relations between current-voltage characteristics, charge transport, heterojunction band offset and performance to the p/i interface defective states were elucidated. The results indicate that the performance shows sensitive to cell structures and material interface defective states. The optimum conversion efficiency coincides to a suitable thickness of optical absorption layer. Interface defective states especially those in p/i region can serious limit the open circuit voltage and full factor. Inserting an applicable buffer layer at p/i interface to alleviate interface states can improve the performance of studied photovoltaic cells.
界面缺陷对(p+)µc-SiC:H/(i)a-Si:H/(n+)a-Si:H太阳能电池性能的影响
本文采用微电子与光子结构分析一维器件仿真程序(AMPS-1D)对(p+)a- sic:H/buffer/(i)a- si:H/(n+)a- si:H的光伏电池进行了优化设计,并对电池性能进行了分析。阐明了电流电压特性、电荷输运、异质结带偏移和性能与p/i界面缺陷态之间的密切关系。结果表明,该性能对细胞结构和材料界面缺陷状态敏感。最佳转换效率与合适的光吸收层厚度一致。接口缺陷状态特别是p/i区缺陷状态会严重限制开路电压和满因数。在p/i界面处插入合适的缓冲层来缓解界面状态,可以改善所研究的光伏电池的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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