{"title":"Interface Defective Effect on Performance of (p+)µc-SiC:H/(i)a-Si:H/(n+)a-Si:H Solar Cells","authors":"Wensheng Wei, Congliang Zhang, Feng Shan","doi":"10.1109/SOPO.2012.6270453","DOIUrl":null,"url":null,"abstract":"Photovoltaic cell with superstrate structure of (p+)a-SiC:H/buffer/(i)a-Si:H/(n+)a-Si:H was optimized and cell performance was analyzed by a numerical software of one-dimensional device simulation program of analysis of microelectronic and photonic structures (AMPS-1D) in this paper. The consanguineous relations between current-voltage characteristics, charge transport, heterojunction band offset and performance to the p/i interface defective states were elucidated. The results indicate that the performance shows sensitive to cell structures and material interface defective states. The optimum conversion efficiency coincides to a suitable thickness of optical absorption layer. Interface defective states especially those in p/i region can serious limit the open circuit voltage and full factor. Inserting an applicable buffer layer at p/i interface to alleviate interface states can improve the performance of studied photovoltaic cells.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2012.6270453","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Photovoltaic cell with superstrate structure of (p+)a-SiC:H/buffer/(i)a-Si:H/(n+)a-Si:H was optimized and cell performance was analyzed by a numerical software of one-dimensional device simulation program of analysis of microelectronic and photonic structures (AMPS-1D) in this paper. The consanguineous relations between current-voltage characteristics, charge transport, heterojunction band offset and performance to the p/i interface defective states were elucidated. The results indicate that the performance shows sensitive to cell structures and material interface defective states. The optimum conversion efficiency coincides to a suitable thickness of optical absorption layer. Interface defective states especially those in p/i region can serious limit the open circuit voltage and full factor. Inserting an applicable buffer layer at p/i interface to alleviate interface states can improve the performance of studied photovoltaic cells.