Single event transient analysis on junctionless silicon nanotube field effect transistor

Abstract

To avoid short channel effects in CMOS, the multigate structures are proposed. Gate all around (Nanowires) devices are the extreme version of the multigate devices. Recently nanotubes are introduced into the device family. Due to its reduced fabrication complexity the junctionless device is of interest to device community. In this paper, the junctionless silicon nanotube filed effect transistor (JLSiNT FET) device is introduced into radiation environment named as single event effect (SEEs) which is induced by the interaction of an ionizing particle such as heavy-ion. Single event transient (SET) analysis is made for the three different structures of JLSiNT FET and observed the drain current perturbation. In this work, all the simulations are carried out using 3D TCAD simulator.