{"title":"IGBT field-stop design for good short circuit ruggedness and a better trade-off with respect to static and dynamic switching characteristics","authors":"H. Felsl, F.-J. Niedemostheide, H. Schulze","doi":"10.23919/ISPSD.2017.7988931","DOIUrl":null,"url":null,"abstract":"The doping profile of the field-stop zone influences the static characteristics (Vce, sat, Vbr) and the dynamic switching characteristics (dic/dt, dVCE/dt, softness) of IGBTs. Furthermore, the short-circuit ruggedness is strongly influenced by the rear side structure of the IGET. In this work, box-like field-stop profiles in combination with a constant p-emitter were analyzed by TCAD simulations. The findings were used to optimize and realize field-stop profiles by proton implantation with the focus to achieve an improved short-circuit ruggedness at the same softness.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The doping profile of the field-stop zone influences the static characteristics (Vce, sat, Vbr) and the dynamic switching characteristics (dic/dt, dVCE/dt, softness) of IGBTs. Furthermore, the short-circuit ruggedness is strongly influenced by the rear side structure of the IGET. In this work, box-like field-stop profiles in combination with a constant p-emitter were analyzed by TCAD simulations. The findings were used to optimize and realize field-stop profiles by proton implantation with the focus to achieve an improved short-circuit ruggedness at the same softness.