Current-Voltage Characteristics of Detector Structures Based on Epitaxial Gallium Arsenide

Abstract

Results of investigation of temperature dependence of current-voltage characteristics (VAC) of detector structures based on epitaxial layers GaAs:Cr is reported. It was determined that forward branches of VAC determined by unipolar injection which changed by the double injection to the semiconductor. Reverse branches, down to the bias of 5 V, determined by generation current. In the range of high reverse voltage current caused by the ionization by collision of the deep levels created by chromium atoms.