Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT

S. Gao, P. Butterworth, A. Sambell, C. Sanabria, H. Xu, S. Heikman, U. Mishra, R. York
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引用次数: 31

Abstract

This paper presents the designs and results of two high-efficiency harmonics-tuned microwave power amplifiers (PA): the first one is a 2 GHz class-F PA in monolithic integrated circuit (MMIC) by using GaN HEMT technology, and the other one is a 2.45-GHz inverse class-F PA using packaged GaAs pHEMT devices with PCB technology. In the class-F MMIC PA, field-plated GaN HEMT device is used for high-power performance. The 2.0-GHz class-F MMIC PA achieves a PAE of 50%, 38 dBm output power, and 6.2 W/mm power density. The inverse class-F PA at 2.45 GHz achieves 22.6 dBm output power and 73% PAE at 3 dB compression, and has very low cost
利用GaN技术和GaAs pHEMT设计微波f类和反f类功率放大器
本文介绍了两种高效谐波调谐微波功率放大器(PA)的设计和结果:一种是采用GaN HEMT技术的2ghz单片集成电路(MMIC) f类放大器,另一种是采用封装的GaAs pHEMT器件和PCB技术的2.45 GHz反f类放大器。在f类MMIC PA中,采用场镀GaN HEMT器件,以提高功率性能。2.0 ghz f类MMIC放大器的PAE为50%,输出功率为38dbm,功率密度为6.2 W/mm。在2.45 GHz频率下,反向f类放大器在3db压缩时输出功率为22.6 dBm, PAE为73%,且成本极低
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