Realization of highly strained short period InAs/GaAs superlattices by means of LP-MOVPE growth on InP substrates

Abstract

Short-period strained layer superlattices (SPSLS) composed of binary materials have attracted considerable interest both for fundamental research and for potential device applications due to their capability of exhibiting the physical behavior of a binary in a horizontal and of a ternary in a vertical direction, respectively. A detailed analysis concerning LP-MOVPE growth and characterization of highly strained single layers and short-period strained-layer superlattices was made using the HRXRD method to determine layer thicknesses, layer quality and interface quality. Influence of growth times as well as period number and growth temperature on the shape of the rocking curves was studied and compared with computer aided simulations.<>