Simulation of a Plasma Enhanced µ-jet-CVD Process

C. Dehning, A. Holländer, A. Leventi-Peetz, K. Silmy
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Abstract

We present results of a coupled calculation to simulate the combined movement and plasma excitation of a process gas, accelerated in the form of a fine beam, known as micro-jet (µ-jet-CVD), between the RF electrodes of a CVD-plasma-reactor, before it reaches the deposition surface. The form and geometry of the deposition, as well as its chemical and physical properties, depend on the chemical properties of the gas, the externally supplied electrical energy as well as the gas-dynamical characteristics of the flow [1]. Previous open jet numerical simulations have examined the possibility of an existing direct analogy of the deposition form to the form of jet lines-geometry for corresponding pressure values in the reactor device. The present preliminary study shows the feasibility of flow coupled to plasma-excitation simulation calculations. The process simulated here is most probably well away from the equilibrium state.
等离子体增强微射流- cvd过程的模拟
我们给出了一个耦合计算的结果,以模拟过程气体的联合运动和等离子体激发,在cvd等离子体反应器的RF电极之间以细光束的形式加速,称为微射流(μ -jet-CVD),然后到达沉积表面。沉积的形式和几何形状,以及它的化学和物理性质,取决于气体的化学性质、外部供电的电能以及流动的气体动力学特性[1]。先前的开放射流数值模拟已经检验了反应器装置中相应压力值的沉积形式与射流线几何形式的现有直接类比的可能性。本文的初步研究表明了流耦合等离子体激励模拟计算的可行性。这里模拟的过程很可能离平衡状态很远。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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