Sol-gel derived lead-free piezoelectric Bi1/2Na1/2TiO3 thin film for MEMS applications

Ting Yu, K. Kwok, H. Chan
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引用次数: 5

Abstract

Bi1/2Na1/2TiO3 (abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650degC. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.
用于MEMS应用的溶胶-凝胶衍生无铅压电Bi1/2Na1/2TiO3薄膜
Bi1/2Na1/2TiO3(简称BNT)被认为是一种很有前途的无铅压电材料,可用于传感器和执行器。在这项研究中,我们展示了一种改进的使用快速热退火(RTA)的溶胶-凝胶工艺。结果表明,在650℃的低温下,每层涂层后在氧气气氛中进行热处理,可以有效地促进BNT薄膜的结晶。所得薄膜致密且在钙钛矿相中结晶良好。利用激光干涉仪对溶胶-凝胶衍生BNT薄膜的压电特性进行了表征。BNT基薄膜有望成为无铅压电MEMS应用的新候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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