A finite-element approach to the development of a general purpose microelectronic device simulator

Changling Sung, F. Ho
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Abstract

Using finite element methods a general purpose two-dimensional microelectronic device simulator is developed. The Newton method is used to linearize the semiconductor equations, which are solved simultaneously by a sparse matrix solver. This simulator can do the modeling for MOSFETs, BJTs, EEPROM transistors, and some other microelectronic devices.
用有限元方法开发通用微电子器件模拟器
利用有限元方法开发了一个通用的二维微电子器件模拟器。采用牛顿法对半导体方程进行线性化,并用稀疏矩阵求解器同时求解。该模拟器可以对mosfet、bjt、EEPROM晶体管和其他微电子器件进行建模。
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