{"title":"Performance evaluation of an emitter switched thyristor for resonant converter applications","authors":"M. Trivedi, C. Winterhalter, H.H. Li, K. Shenai","doi":"10.1109/PEDS.1995.404954","DOIUrl":null,"url":null,"abstract":"This paper reports on the static and dynamic switching characteristics of an emitter switched thyristor (EST) for resonant power converter applications. Two-dimensional (2-D) mixed device and circuit simulations were used to study the carrier switching dynamics. It is shown that during turn-on, the EST has better performance than an IGBT with significantly enhanced drift region conductivity modulation. Thyristor-like on-state operation of EST leads to a slight degradation of the turn-off performance as compared to the IGBT.<<ETX>>","PeriodicalId":244042,"journal":{"name":"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEDS.1995.404954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reports on the static and dynamic switching characteristics of an emitter switched thyristor (EST) for resonant power converter applications. Two-dimensional (2-D) mixed device and circuit simulations were used to study the carrier switching dynamics. It is shown that during turn-on, the EST has better performance than an IGBT with significantly enhanced drift region conductivity modulation. Thyristor-like on-state operation of EST leads to a slight degradation of the turn-off performance as compared to the IGBT.<>