On-chip vertically coiled solenoid inductors and transformers for RF SoC using 90nm CMOS interconnect technology

H. Namba, T. Hashimoto, M. Furumiya
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引用次数: 14

Abstract

This paper presents very small on-chip vertically coiled solenoid inductors (V-solenoid) using 90nm CMOS multilevel interconnect technology. In addition, a variety of areas-saving (10um × 20um) transformers without any additional processing steps are demonstrated: a V-solenoid surrounded by another different inside-diameter V-solenoid (dual-tube transformer), a V-solenoid coiled around another one with same dimensions (a double-helix or DNA-like transformer), and face-to-face V-solenoids (face-to-face transformer). Radio-frequency characteristics were evaluated on the basis of 2-port S-parameter measurements. Measured self-resonance frequencies resulted in higher than 40GHz, and coupling coefficients were larger than 0.6.
片上垂直卷曲螺线管电感和变压器射频SoC使用90nm CMOS互连技术
本文介绍了一种采用90纳米CMOS多层互连技术的非常小的片上垂直卷曲电磁电感器(v -螺线管)。此外,还展示了各种节省面积(10um × 20um)的变压器,无需任何额外的加工步骤:一个v型螺线管被另一个不同内径的v型螺线管(双管变压器)包围,一个v型螺线管绕在另一个相同尺寸的v型螺线管上(双螺旋或dna样变压器),面对面的v型螺线管(面对面变压器)。基于2端口s参数测量评估射频特性。测量的自共振频率大于40GHz,耦合系数大于0.6。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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