AlGaN/GaN FinFET: A Comparative Study

Abstract

In this paper, a comprehensive study is conducted on AlGaN/GaN FinFETs as a potential candidate for microwave and power applications. It has been described that due to superior material properties associated with GaN and electrical properties exhibited by the tri-gate structure, FinFETs offer superior results for radio frequency applications. The tri-gate structure of FinFET allows full depletion of the channel, which results in low leakage current and dynamic power loss. FinFETs offer higher current density and integration compared to other mainstream CMOS technologies.