Physics-based modeling of NPT and PT IGBTs at deep cryogenic temperatures

Abstract

Detailed experimental data taken for punch-through (PT) and nonpunch-through (NPT) insulated gate bipolar transistors (IGBTs) are presented. The test program covered IGBT devices rated for 100-600 A and 600-1200 V from different manufacturers. The turn off behavior of the IGBTs is examined over a temperature range of 4.2 to 295 K. Physical behavior at low junction temperatures is analyzed. The IGBTs are consequently modeled using the Palmer-Leturcq model, a physics-based model based on the Fourier expansion of the ambipolar diffusion equation.