Retarding Field Energy Analyzer Optimization And Space Charge Effects

M. Talley, S. Shannon, Lee Chen, J. Verboncoeur
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Abstract

In industrial plasma processing for semiconductor fabrication, it is important to understand the characteristic properties of the plasma. The ion energy distribution function (IEDf) is one such property. The IEDf has a direct impact on process outcomes. Retarding field energy analyzers (RFEAs) have been used extensively to obtain IV curves for typical process conditions. These IV curves are often analyzed using an ideal RFEA model when calculating IEDfs. However, several factors can cause a measured IV curve to deviate from an ideal one, especially for higher grid voltages and plasma densities. Three factors to consider are voltage dip within the grid holes 1, electric field non-uniformity due to the probe geometry, and space charge build up between the grids 2. This last factor is a result of high ion flux or larger grid separation caused by high grid voltages. In this study, electrostatic simulations (EM Works) and particle-in-cell (PIC) simulations (XPDP1) were used to parametrize the impact of these factors on IV curves. Electrostatic simulation results led to a RFEA geometric design that minimized vertical electric field variations. The field uniformity was improved by 25x across the sensor area after optimization. In addition, the overestimation of the IEDf due to voltage dip within the grid holes was quantified. A shift of 2–2.5 eV was observed. Computed IEDfs were reconstructed from PIC generated IV curves using regularization methods. These simulations demonstrate how IV curves vary due to space charge build up. Space charge only affected lower energy ions. The specific energy is dependent on the grid separation distance. In this case, the IV curve begins to fall off at a lower voltage with a more gradual slope causing a larger low energy tail. This non-ideality in the curve can be corrected by limiting the flux of ions into the probe or through corrections during the regularization reconstruction. By taking these factors into account, it is possible to optimize a RFEA and modify measured IV curves to better represent an ideal curve.
减速场能量分析仪优化及空间电荷效应
在半导体制造的工业等离子体加工中,了解等离子体的特性是非常重要的。离子能量分布函数(IEDf)就是这样一种性质。IEDf对过程结果有直接的影响。减速场能量分析仪(RFEAs)已被广泛用于获得典型工艺条件下的IV曲线。在计算iedf时,通常使用理想的RFEA模型来分析这些IV曲线。然而,有几个因素会导致测量的IV曲线偏离理想曲线,特别是在电网电压和等离子体密度较高的情况下。需要考虑的三个因素是:栅格孔内的电压下降1、探针几何形状导致的电场不均匀性以及栅格之间的空间电荷积累2。最后一个因素是高离子通量或高电网电压引起的较大电网分离的结果。本研究采用静电模拟(EM Works)和细胞内颗粒(PIC)模拟(XPDP1)来参数化这些因素对IV曲线的影响。静电模拟结果导致RFEA几何设计,使垂直电场变化最小。优化后,整个传感器区域的场均匀性提高了25倍。此外,还量化了由于电网孔内电压下降而导致的IEDf的高估。观察到2-2.5 eV的位移。利用正则化方法对PIC生成的IV曲线重建计算出的iedf。这些模拟演示了IV曲线是如何随着空间电荷的积累而变化的。空间电荷只影响低能离子。比能取决于网格分离距离。在这种情况下,IV曲线在较低的电压下开始下降,斜率更平缓,导致较大的低能量尾部。曲线中的这种非理想性可以通过限制进入探针的离子通量或通过正则化重建期间的修正来纠正。通过考虑这些因素,可以优化RFEA和修改测量的IV曲线,以更好地代表理想曲线。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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