Chamberless plasma enhanced chemical vapor deposition of BPSG films

Abstract

Summary form only given. In this paper, atmospheric pressure plasma enhanced chemical vapor deposition AP-PECVD) process has been used to grow boro-phospho-silicate glass (BPSG) on the silicon wafer. The component fraction of the three precursors (tetraethoxysilane, triethylphosphate and triethylborate) was optimized according to quality of BPSG films from the XPS and FT-IR results. The effects of the RF power and oxygen flow rate on deposition rate were also studied. Reactive gaseous species were obtained by optical emission spectroscopy to reveal the possible process of BPSG films deposition. In summary, the atmospheric pressure plasma is a promising tool for the BPSG thin film deposition.