NEGF Simulation of Nanowire Field Effect Transistors Using the Eight-band k · p method

Abstract

We have developed a full quantum transport simulator for nanowire field effect transistors based on the eight- band k ldr p Hamiltonian. The NEGF formalism was employed for transport calculation and the self-consistent calculations were performed. We were able to reduce the size of the Hamiltonian greatly by performing the mode-space transformation followed by selecting a small number of modes contributing to the transport. This, together with the approximate but highly accurate solutions of cross-section wave-functions, enabled us to carry out the transport calculation very efficiently. In this work, we demonstrate the capability of our simulator by showing the hole transport in PMOS Si nanowire transistors and the band-to-band tunneling in InAs nanowire transistors.