Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 /spl mu/m

2005 Quantum Electronics and Laser Science Conference Pub Date : 2005-05-22 DOI:10.1109/QELS.2005.1549100

J. Fu, X. Yu, Y. Kuo, J. Harris

引用次数: 0

Abstract

Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characterized and the absorption coefficient was measured with transmission spectroscopy.

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扩展InGaAs/InGaAs量子结构用于1.9 /spl mu/m以上的近红外光探测

采用分子束外延的两种应变补偿技术，在InP衬底上生长了扩展InGaAs量子结构。用透射光谱法对材料质量进行了表征，并测定了吸收系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2005 Quantum Electronics and Laser Science Conference

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