Dislocation and temperature effects on zero-bias resistance-area product of InGaSb PIN photodiodes

Abstract

The effects of dislocation and temperature on zero-bias resistance-area product (R0A) of InGaSb PIN photodiodes are analyzed using a model which takes into account the dislocation and temperature dependence of minority carrier lifetime and the effect of space charge density around the dislocation core. Dislocation tends to decrease the zero-bias resistance-area product by adding shunt impedance paths for dark current flow as well as by reducing the minority carrier lifetime. Through the dislocation and temperature dependant modeling, maximum R0A is found to be 1.85 Ω cm2 at 139 K for InGaSb PIN photodiodes. Theoretical results are fitted with experimental data obtained at 300 K and 363 K.