Modeling and Simulation of Heterojunction Based Multilayer High-Speed Vertical CIGS Photodetector

Abstract

In this work we have demonstrated the numerical simulation depicting the improved characteristics of a vertical copper indium gallium selenide (CIGS) Photodetector. The CIGS material has already been established as a potential photovoltaic material in solar cells; however, there are some improvements needed to be incorporated in CIGS based photodetectors. We have demonstrated the heterojunction-based CIGS photodetector with enhanced photodetection proving it a promising material to be used as optical detectors in micro-optical systems. The structure consists of layers of Mo/CIGS/CdS/ZnO/ITO, when numerically simulated shows outstanding responsivity performance of 1.9 A -W-l and a sensitivity of 8.2$\times-1010$ Jones. The structure is numerically analysed using Lumerical FDTD and DEVICE tool. I-V characteristics, and EQE has been analysed to evaluate the proposed architecture for its claims in photonics and other detection mechanisms.