A fully GaAs-based 100MHz, 2W DC-to-DC Power Converter

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194421

S. Ajram, R. Kozlowski, H. Fawaz, D. Vandermoere, G. Salmer

引用次数: 4

Abstract

Potential applications of III-V power devices in the very highfrequency, high-efficiency and compact size DC-to-DC switching converters are shown. A 100MHz-5V/10V-2W Boost converter, fully based on GaAs semiconductors, is presented. A specific 27V breakdown Schottky rectifier has been realised for this purpose as well as a 500ps transition time MESFET-based gate driver. Power efficiency of about 69% has been reached.

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一个完全基于gaas的100MHz, 2W dc - dc电源转换器

展示了III-V功率器件在甚高频、高效率和小尺寸dc - dc开关变换器中的潜在应用。提出了一种完全基于砷化镓半导体的100MHz-5V/10V-2W升压变换器。为此目的实现了特定的27V击穿肖特基整流器以及500ps过渡时间基于mesfet的栅极驱动器。电源效率达到69%左右。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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27th European Solid-State Device Research Conference

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