Highly efficient gallium nitride transistors designed for high power density and high output current DC-DC converters

Abstract

Continuing to raise the bar for power conversion performance, eGaN FETs are steadily improving performance in high power density and high current applications. In this paper we will discuss the latest developments in DC-DC converters, including a major improvement in eGaN FETs with the latest generation devices. This new family of eGaN FETs is keeping Moore's Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOSFET in high frequency power conversion. The final demonstrations will include a 12 V to 1.2 V, 40 A POL converter operating at a switching frequency of 1 MHz achieving efficiencies above 91.5%, and a 48 V to 12 V, 30 A non-isolated buck DC-DC intermediate bus converter operating at a switching frequency of 300 kHz achieving efficiencies above 98%.