Reliability of InGaP/GaAs HBT's under high current acceleration

Abstract

The reliability of InGaP/GaAs heterojunction bipolar transistors (HBT's) under high emitter current density stress has been investigated. The current acceleration of transistor lifetime is modeled as a power law relationship. Over a range of 25kA/cm/sup 2/ to 150 kA/cm/sup 2/, we have extracted a square root dependence of lifetime on current density. These results compare with an approximate square law result measured on AlGaAs HBT's.