Enhanced Fracture Toughness in Ceramic Superlattice Thin Films: On the Role of Coherency Stresses and Misfit Dislocations

A. Wagner, D. Holec, P. Mayrhofer, M. Bartosik
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引用次数: 12

Abstract

Superlattice (SL) thin films composed of refractory ceramics unite extremely high hardness and enhanced fracture toughness; a material combination often being mutually exclusive. While the hardness enhancement obtained whentwo materials form a superlattice is well described by existing models based on dislocation mobility, the underlying mechanisms behind the increase in fracture toughness are yet to be unraveled. Here we provide a model based on linear elasticity theory to predict the fracture toughness enhancement in (semi-)epitaxial nanolayers due to coherency stresses and formation of misfit dislocations. We exemplarily study a superlattice structure composed of two cubic transition metal nitrides (TiN, CrN) on a MgO (100) single-crystal substrate. Minimization of the overall strain energy, each time a new layer is added on the nanolayered stack, allows estimating the density of misfit dislocations formed at the interfaces. The evolving coherency stresses, which are partly relaxed by the misfit dislocations, are then used to calculate the apparent fracture toughness of respective SL architectures by applying the weight function method. The results show that the critical stress intensity increases steeply with increasing bilayer period for very thin (essentially dislocation-free) SLs, before the K_IC values decline more gently along with the formation of misfit dislocations. The characteristic K_IC vs. bilayer-period-dependence nicely matches experimental trends. Importantly, all critical stress intensity values of the superlattice films clearly exceed the intrinsic fracture toughness of the constituting layer materials, evincing the importance of coherency stresses for increasing the crack growth resistance.
陶瓷超晶格薄膜断裂韧性的增强:关于相干应力和错配位错的作用
由难熔陶瓷组成的超晶格(SL)薄膜具有极高的硬度和增强的断裂韧性;相互排斥的物质组合虽然基于位错迁移率的现有模型很好地描述了两种材料形成超晶格时获得的硬度增强,但断裂韧性增加背后的潜在机制尚未揭示。本文提出了一个基于线弹性理论的模型来预测(半)外延纳米层中由于相干应力和错配位错的形成而导致的断裂韧性增强。我们在MgO(100)单晶衬底上研究了由两种立方过渡金属氮化物(TiN, CrN)组成的超晶格结构。每次在纳米层叠层上添加新层时,将总应变能最小化,从而可以估计在界面上形成的错配位错的密度。然后,应用权函数法,将演化的相干应力(由错配位错部分松弛)用于计算各自SL结构的表观断裂韧性。结果表明:极薄(基本无位错)合金的临界应力强度随着双层周期的增加而急剧增加,而K_IC值随着错配位错的形成而缓慢下降;K_IC与双层周期相关的特性很好地符合实验趋势。重要的是,超晶格薄膜的所有临界应力强度值都明显超过了构成层材料的固有断裂韧性,证明了相干应力对提高抗裂纹扩展能力的重要性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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