A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) Pub Date : 2000-06-10 DOI:10.1109/RFIC.2000.854446

H. Siweris, A. Werthof, H. Tischer, T. Grave, H. Werthmann, R. Rasshofer, W. Kellner

引用次数: 23

Abstract

A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky mixer diode has been developed for 77 GHz automotive radar systems. It facilitates the realization of a high performance millimeter-wave radar front-end with a minimum amount of chip area and, consequently, low production costs.

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一种用于毫米波汽车雷达前端的混合Si和GaAs芯片组

为77 GHz汽车雷达系统开发了一种由三个GaAs HEMT mmic(压控振荡器、中功率放大器、次谐波混频器)和一个分立Si肖特基混频器二极管组成的芯片。它有助于以最小的芯片面积实现高性能毫米波雷达前端，从而降低生产成本。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)

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