A D-band Monolithic Low Noise Amplifier on InP HEMT Technology

Abstract

In this paper, a D-band monolithic microwave integrated circuit low noise amplifier (LNA) is designed by using $0.5 \mu\mathbf{m}$ InP high electron mobility transistor (HEMT) technology. The circuit is mainly composed of five-stage of common-source amplification structure, and resistance and capacitance are connected in series to form a feedback network, which can improve the stability of the circuit. The series resistance and parallel grounding capacitance on the DC bias circuit constitute a low-pass structure, which is to absorb the gain of the circuit at low frequency, prevent the circuit from self-oscillation. In the 120-150GHz frequency range, the simulated gain is above 18.5 dB, and the noise figure is lower than 4.5dB. The area of this chip is $1.12\times 0.62\mathbf{mm}^{2}$, and the power consumption of the whole circuit is 47mW.