Numerical analysis of gate triggered SCR turn-on transients

Abstract

A one dimensional transient analysis for the distribution of carriers and potential within a power thyristor was carried out. The simulation is based on geometrical, technological and physical data obtained from an actual device structure. The 11-A thyristor CS 106 has an area of .02 cm2and a thickness of 265 microns. The simulation includes all known physical mechanisms which are important for power devices, e.g. SRH- and Auger recombination avalanche multiplication, and mobility saturation effects. The results of this numerical approach show different internal mechanisms, which are identified with the different time delays of the turn-on wave forms.