A low-voltage wide-swing FGMOS current amplifier

K. Moolpho, J. Ngarmnil, K. Nandhasri
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引用次数: 5

Abstract

This paper proposes a new current amplifier circuit totally formed in the class AB structure utilizing CMOS inverters and the recently proposed additive analog inverter using floating-gate MOSFETs. Operating in a negative feedback topology, the amplifier can deal with wide signal swings up to /spl plusmn/200 /spl mu/A, with 1% of the THD and 10 pF of C/sub L/. Designs and HSPICE simulation results are demonstrated on 0.5 /spl mu/m double poly CMOS processes with 1.5 V and 1 V power supplies to indicate high frequency and low power capabilities respectively.
一种低压宽摆FGMOS电流放大器
本文利用CMOS逆变器和最近提出的采用浮栅mosfet的加性模拟逆变器,提出了一种完全采用AB类结构的新型电流放大电路。在负反馈拓扑中工作,放大器可以处理高达/spl plusmn/200 /spl mu/ a的宽信号摆幅,THD为1%,C/sub / 10pf。设计和HSPICE仿真结果在0.5 /spl μ l /m双聚CMOS工艺上进行了演示,分别采用1.5 V和1 V电源表示高频和低功耗能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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