Coupler characterization of superconducting transmons qubits for cross-resonance gate

H. Paik, S. Srinivasan, S. Rosenblatt, J. Chavez-Garcia, D. Bogorin, O. Jinka, G. Keefe, Dongbing Shao, J. Yau, M. Brink, J. Chow
{"title":"Coupler characterization of superconducting transmons qubits for cross-resonance gate","authors":"H. Paik, S. Srinivasan, S. Rosenblatt, J. Chavez-Garcia, D. Bogorin, O. Jinka, G. Keefe, Dongbing Shao, J. Yau, M. Brink, J. Chow","doi":"10.1109/IEDM13553.2020.9371955","DOIUrl":null,"url":null,"abstract":"We characterize two-qubit cross-resonance gates and unintended residual coupling on various coupled qubit arrangements. Direct coupling versus coupling via a quantum bus are studied on the basis of cross-resonance gate rate and fall-off of non-nearest neighbor coupling. We experimentally extract coupling rates using Hamiltonian tomography methods, and compare with microwave simulations.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

We characterize two-qubit cross-resonance gates and unintended residual coupling on various coupled qubit arrangements. Direct coupling versus coupling via a quantum bus are studied on the basis of cross-resonance gate rate and fall-off of non-nearest neighbor coupling. We experimentally extract coupling rates using Hamiltonian tomography methods, and compare with microwave simulations.
交叉共振门超导传输量子比特的耦合器特性
我们描述了两个量子位交叉共振门和各种耦合量子位排列上的意外剩余耦合。基于交叉共振门速率和非最近邻耦合的衰减,研究了直接耦合和量子总线耦合。我们用哈密顿层析成像方法提取了耦合率,并与微波模拟进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信