Design of 3 stage low noise operational amplifier

G. Sharma, Divesh Kumar, Alok Kumar
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引用次数: 1

Abstract

In this paper a high gain low noise Op-Amp has been designed. In designing of a high gain Op-Amp, for large values of coupling capacitor, gain will decrease. Since our requirement was to increase the gain, so we have designed a three stage Op-Amp. Our designed circuit provides gain of 78.4 dB, which is very much larger than two stage Op-Amp. There is a trade-off between various parameters like Phase margin, gain, slew rate etc. For example, to achieve larger values of GBW, PM will decrease. We have compared the results for two values of input common mode range. Improvement in the designed circuit is done to achieve the desired GBW by recalculating the transistor's W/L ratios and then simulating the results. Gain Bandwidth product of 176.9 MHz and Phase Margin greater than 60 degrees is achieved but at the cost of power dissipation and area. The Op-Amp is designed in gpdk 180 nm CMOS technology.
三级低噪声运算放大器的设计
本文设计了一种高增益、低噪声的运算放大器。在设计高增益运算放大器时,耦合电容的取值越大,会导致增益降低。由于我们的要求是增加增益,所以我们设计了一个三级运算放大器。我们设计的电路提供78.4 dB的增益,这比两级运算放大器大得多。在相位裕度、增益、摆压率等各种参数之间存在权衡。例如,为了获得更大的GBW值,PM会减少。我们比较了两个输入共模范围值的结果。通过重新计算晶体管的W/L比并对结果进行仿真,对设计电路进行改进以达到期望的GBW。增益带宽积为176.9 MHz,相位裕度大于60度,但以功耗和面积为代价。运算放大器采用gpdk 180纳米CMOS技术设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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