The DI lateral insulated gate field controlled thyristor (LIGFT)

Abstract

A new device called the DI Lateral insulated Field Controlled Thyristor (LIGFT) is introduced, which eliminates the parasitic thyristor latchup problem of the LIGBT. The LIGFT successfully integrates a high voltage lateral FCT with a series low voltage lateral MOSFET to create a unique MOS-gate controlled three terminal device. In comparison to the LIGBT, the LIGFT is experimentally shown to achieve a tremendous increase in maximum controllable current (RBSOA) and FBSOA by eliminating parasitic thyristor latchup, at the expense of an increase in on-state voltage drop.