Parasitically Coupled Three Element DRA Array with Reduced Side Lobe Lavel

S. Ballav, S. K. Parui
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Abstract

A three element E-plane parasitic DRA array partially inserted within a secondary substrate has been realized in this paper for broadside radiation. The proposed DRA array operates from 7.02 GHz to 7.26 GHz and gives broadside radiation pattern with a peak gain of 7.22 dBi. Four metal strips are placed in very close proximity to the DRAs which help to improve the matching as well as decrease the side lobe lavel. Three different arrangement of the array is studied here and from simulations results of S11 and radiation characteristics it is evident that embedded array with metal strips is improved the side lobe lavel almost 3.2 dB in E-plane compared to the isolated array.
降低旁瓣电平的寄生耦合三元DRA阵列
本文实现了一种部分插入二次基板的三元e平面寄生DRA阵列,用于宽侧辐射。所提出的DRA阵列工作在7.02 GHz至7.26 GHz之间,其宽侧辐射方向图的峰值增益为7.22 dBi。四个金属条放置在非常靠近dra的位置,这有助于改善匹配并降低旁瓣电平。本文研究了三种不同的阵列布置,从S11和辐射特性的模拟结果可以看出,与隔离阵列相比,嵌入金属条的阵列在e平面上的旁瓣电平提高了近3.2 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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