{"title":"Defect reduction through statistical process control and prior-level subtraction analysis","authors":"D. Shanks","doi":"10.1109/ASMC.1996.558023","DOIUrl":null,"url":null,"abstract":"This paper discusses the reduction of defects in a nitride etching process using statistical process control (SPC). How defects are reduced in a contact process is also described.","PeriodicalId":325204,"journal":{"name":"IEEE/SEMI 1996 Advanced Semiconductor Manufacturing Conference and Workshop. Theme-Innovative Approaches to Growth in the Semiconductor Industry. ASMC 96 Proceedings","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/SEMI 1996 Advanced Semiconductor Manufacturing Conference and Workshop. Theme-Innovative Approaches to Growth in the Semiconductor Industry. ASMC 96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1996.558023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper discusses the reduction of defects in a nitride etching process using statistical process control (SPC). How defects are reduced in a contact process is also described.