Improving the SiGeAsTe Ovonic Threshold Switching (OTS) Characteristics by Microwave Annealing for Excellent Endurance (> 1011) and Low Drift Characteristics
J. Lee, S. Kim, Sangmin Lee, Sanghyun Ban, Seongjae Heo, Donghwa Lee, O. Mosendz, H. Hwang
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引用次数: 2
Abstract
To improve the reliability of a nanoscale (d=30 nm) ovonic threshold switching (OTS) selector, we report for the first time the effect of microwave annealing (MWA) on the electrical characteristics of an OTS device. The MWA-treated OTS device shows low initial forming voltage, excellent endurance (> 1011), and reduced threshold voltage (Vth) drift (~ 67 %), while maintaining its great switching characteristics (Ioff = 0.8 nA at 1.1 V). Enhanced As-Te bonding probability after MWA, which was confirmed by Raman spectroscopy and density functional theory (DFT) calculations, can explain low forming voltage and improved device reliability.